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| HCC/HCF40109B QUAD LOW-TO-HIGH VOLTAGE LEVEL SHIFTER .I .UP .THREE.STANDARDI .QUI .5V,10V,AND15VPARAMETRI .I .100%TESTEDFORQUI .MEETSALLREQUI NDEPENDENCE OF POWER SUPPLY SEQUENCE CONSIDERATIONS - VCC CAN EXCEED VDD, INPUT SIGNALS CAN EXCEED BOTH VCC AND VDD AND DOWN LEVEL-SHIFTING CAPABILITY STATE OUTPUTS WITH SEPARATE ENABLE CONTROLS ZED SYMMETRICAL OUTPUT CHARACTERISTICS ESCENT CURRENT SPECIFIED AT 20V FOR HCC DEVICE C RATINGS NPUT CURRENT OF 100nA AT 18V AND 25C FOR HCC DEVICE ESCENT CURRENT REMENTS OF JEDEC TENTATIVE STANDARD N. 13A, "STANDARD SPECIFICATIONS FOR DESCRIPTION OF "B" SERIES CMOS DEVICES" controls produces a high-impedance state in the corresponding output. EY (Plastic Package) F (Ceramic Frit Seal Package) C1 (Micro package) C1 (Plastic Chip Carrier) ORDER CODES : HCC40109BF HCF40109BM1 HCF40109BEY HCF40109BC1 DESCRIPTION The HCC40109B (extended temperature range) and HCF40109B (intermediate temperature range) are monolithic integrated circuits, available in 16lead dual in-line plastic or ceramic package and plastic micropackage. The HCC/HCF40109B contains four low-to-high-voltage level-shifting circuits. Each circuit will shift a low-voltage digital-logic input signal (A, B, C, D) with logical 1 = VCC and logical 0 = VSS to a higher-voltage output signal (E, F, G, H) with logical 1 = VDD and logical 0 = VSS. The HCC/HCF40109B, unlike other low-to-high levelshifting circuits, does not require the presence of the high-voltage supply (VDD) before the application of either the low-voltage supply (VCC) or the input signals. There are no restrictions on the sequence of application of VDD, VCC, or the input signals. In addition, there are no restrictions on the relative magnitudes od the supply voltages or input signals within the device maximum ratings ; VCC may exceed VDD, and input signals may exceed VCC, and VDD. When operated in the mode VCC VDD, the HCC/HCF40109B, will operate as a high-to-low level-shifter. The HCC/HCF 40109B also features individual three-state output capability. A low level on any of the separately enabled three-state output June 1989 PIN CONNECTIONS 1/12 HCC/HCF40109B FUNCTIONAL DIAGRAM 1 of 4 units ABSOLUTE MAXIMUM RATINGS Symbol V DD * Vi II Pto t Parameter Supply Voltage : HC C Types H C F Types Input Voltage DC Input Current (any one input) Total Power Dissipation (per package) Dissipation per Output Transistor for T o p = Full Package-temperature Range Operating Temperature : HCC Types H CF Types Storage Temperature Value - 0.5 to + 20 - 0.5 to + 18 - 0.5 to V DD + 0.5 10 200 100 - 55 to + 125 - 40 to + 85 - 65 to + 150 Unit V V V mA mW mW C C C T op T stg Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability. * All voltage are with respect to VSS (GND). RECOMMENDED OPERATING CONDITIONS Symbol V DD VI Top Parameter Supply Voltage : H CC Types H C F Types Input Voltage Operating Temperature : HCC Types H CF Types Value 3 to 18 3 to 15 0 to V DD - 55 to + 125 - 40 to + 85 Unit V V V C C LOGIC DIAGRAM TRUTH TABLE Inputs Mode Low to High Level Shift Outputs Enable A, B, C , D A, B, C , D E , F , G , H 0 1 X LOGIC 0 = LOW (VSS) LOGIC 1 = VCC 1 1 0 0 1 Z X = Don't Care. Z = High Impedance. at INPUTS and VDD at OUTPUTS. 2/12 HCC/HCF40109B STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions) Test Conditions Symbol Parameter VI (V) 0/ 5 HCC Types 0/15 0/20 0/ 5 HCF 0/10 Types 0/15 V OH Output High Voltage 0/ 5 0/10 0/15 V OL Output Low Voltage 5/0 10/0 15/0 V IH V IL I OH Input High Voltage Input Low Voltage Output Drive Current 0/ 5 HCC 0/ 5 Types 0/10 0/15 0/ 5 HCF 0/ 5 Types 0/10 0/15 I OL Output Sink Current 0/ 5 HCC 0/10 Types 0/15 0/ 5 HCF 0/10 Types 0/15 IIH , IIL Input Leakage Current HCC 0/18 Types HCF 0/15 Types 1/9 1/9 2.5 4.6 9.5 13.5 2.5 4.6 9.5 13.5 0.4 0.5 1.5 0.4 0.5 1.5 <1 <1 <1 <1 <1 <1 <1 <1 5 10 5 10 1.5/13.5 < 1 Value T L o w* Min Max. 1 2 4 20 4 8 16 4.95 9.95 14.95 0.05 0.05 0.05 3.5 7 1.5 3 -2 - 0.64 - 1.6 - 4.2 - 1.53 - 0.52 - 1.3 - 3.6 0.64 1.6 4.2 0.52 1.3 3.6 0.1 0.3 - 1.6 - 3.2 - 0.51 -1 - 1.3 - 2.6 - 3.4 - 6.8 - 1.36 - 3.2 - 0.44 -1 - 1.1 - 2.6 - 3.0 - 6.8 0.51 1.3 3.4 0.44 1.1 3.0 1 2.6 6.8 1 2.6 6.8 10-5 0.1 10-5 0.3 3.5 7 1.5 3 - 1.15 - 0.36 - 0.9 - 2.4 - 1.1 - 0.36 - 0.9 - 2.4 0.36 0.9 2.4 0.36 0.9 2.4 1 1 A mA mA 4.95 9.95 14.95 0.05 0.05 0.05 3.5 7 1.5 3 V Min. 25C Typ. Max. 0.02 0.02 0.02 0.04 0.02 0.02 0.02 1 2 4 20 4 8 16 4.95 9.95 14.95 0.05 0.05 0.05 V V V T Hig h* Min. Max. 30 60 120 600 30 60 120 A Unit VO (V) |IO| V CC V DD (A) (V) (V) 5 10 15 20 5 10 15 5 10 15 5 10 15 10 15 10 15 5 5 10 15 5 5 10 15 5 10 15 5 10 15 18 IL Quiescent Current 0/10 1.5/13.5 < 1 Any Input 15 * TLow = - 55C for HCC device : - 40C for HCF device. * THigh = + 125C for HCC device : + 85C for HCF device. The Noise Margin for both "1" and "0" level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V min. with VDD = 15V. ** Forced output disabled. 3/12 HCC/HCF40109B STATIC ELECTRICAL CHARACTERISTICS (continued) Test Conditions Symbol Parameter VI (V) VO (V) 0/18 0/15 Any Input IO V CC V DD (V) (V) (V) 18 15 T L ow* Min. Max. 0.4 1.0 Min. Value 25 C Typ. Max. 10 - 4 0.4 10 - 4 1.0 5 7.5 T Hig h* Min. Max. 12 A 7.5 pF Unit I OH , I OL** 3-State Output Leakage Current HCC Types 0/18 HCF Types 0/15 CI Input Capacitance * TLow = - 55C for HCC device : - 40C for HCF device. * THigh = + 125C for HCC device : + 85C for HCF device. The Noise Margin for both "1" and "0" level is : 1V min. with VDD = 5V, 2V min. with VDD = 10V, 2.5V min. with VDD = 15V. ** Forced output disabled. DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25C, CL = 50pF, RL = 200k, typical temperature coefficient for all VDD values is 0.3%/C, all input rise and fall time = 20ns) Symbol t PHL , tPLH Parameter Propagation Delay Time (data input to output) High to Low Level Shifting Mode Test Conditions V CC (V) V DD (V) 5 10 5 15 10 15 10 5 15 5 15 10 5 10 5 15 10 15 10 5 15 5 15 10 5 10 5 15 10 15 10 5 15 5 15 10 5 10 5 15 10 15 10 5 15 5 15 10 5 10 5 15 10 15 10 5 15 5 15 10 Min. Value Typ. 300 220 180 850 850 290 130 120 70 230 230 80 60 50 35 120 120 40 320 230 180 800 800 280 370 300 250 850 850 350 Max. 600 440 360 1600 1600 580 260 240 140 460 460 160 120 100 70 240 240 80 640 460 360 1500 1500 560 740 600 500 1600 1600 700 Unit L-H ns H-L Low to High Level L-H ns H-L tPHZ 3-State Disable Delay Time Output High to High Impedance L-H ns H-L tPZ H High Impedance to Output High L-H ns H-L tPLZ Output Low to High Impedance L-H ns H-L 4/12 HCC/HCF40109B DYNAMIC ELECTRICAL CHARACTERISTICS (continued) Symbol tPZL Parameter High Impedance to Output Low L-H Shifting Mode Test Conditions V CC (V) V DD (V) 5 10 5 15 10 15 10 5 15 5 15 10 5 10 5 15 10 15 10 5 15 5 15 10 Min. Value Typ. 100 80 40 120 120 40 50 40 40 100 100 50 Max. 200 160 80 240 240 80 100 80 80 200 200 100 Unit ns H-L t T HL, t T LH Transition Time L-H ns H-L Output Low (sink) Current Characteristics. Output High (source) Current Characteristics. Typical Transition Timevs. Load Capacitance. Typical High-to-low Propagation Delay Time vs. Load Capacitance. 5/12 HCC/HCF40109B Typical Low-to-high Propagation Delay Time vs. Load Capacitance. Typical Input Switching vs. High-level Supply Voltage. High-level Supply Voltage vs. Low-level Supply Voltage. Typical Dynamic Power Dissipation vs. Input Frequency. TEST CIRCUITS Output Enable Delay Times Test Circuit and Waveforms. 6/12 HCC/HCF40109B TEST CIRCUITS (continued) Quiescent Device Current. Input Voltage. Input Leakage Current. Dynamic Power Dissipation. 7/12 HCC/HCF40109B Plastic DIP16 (0.25) MECHANICAL DATA mm MIN. a1 B b b1 D E e e3 F I L Z 3.3 1.27 8.5 2.54 17.78 7.1 5.1 0.130 0.050 0.51 0.77 0.5 0.25 20 0.335 0.100 0.700 0.280 0.201 1.65 TYP. MAX. MIN. 0.020 0.030 0.020 0.010 0.787 0.065 inch TYP. MAX. DIM. P001C 8/12 HCC/HCF40109B Ceramic DIP16/1 MECHANICAL DATA mm MIN. A B D E e3 F G H L M N P Q 7.8 2.29 0.4 1.17 0.22 0.51 0.38 17.78 2.79 0.55 1.52 0.31 1.27 10.3 8.05 5.08 0.307 0.090 0.016 0.046 0.009 0.020 3.3 0.015 0.700 0.110 0.022 0.060 0.012 0.050 0.406 0.317 0.200 TYP. MAX. 20 7 0.130 MIN. inch TYP. MAX. 0.787 0.276 DIM. P053D 9/12 HCC/HCF40109B SO16 (Narrow) MECHANICAL DATA DIM. MIN. A a1 a2 b b1 C c1 D E e e3 F G L M S 3.8 4.6 0.5 9.8 5.8 1.27 8.89 4.0 5.3 1.27 0.62 8 (max.) 0.149 0.181 0.019 10 6.2 0.35 0.19 0.5 45 (typ.) 0.385 0.228 0.050 0.350 0.157 0.208 0.050 0.024 0.393 0.244 0.1 mm TYP. MAX. 1.75 0.2 1.65 0.46 0.25 0.013 0.007 0.019 0.004 MIN. inch TYP. MAX. 0.068 0.007 0.064 0.018 0.010 P013H 10/12 HCC/HCF40109B PLCC20 MECHANICAL DATA mm MIN. A B D d1 d2 E e e3 F G M M1 1.27 1.14 7.37 1.27 5.08 0.38 0.101 0.050 0.045 9.78 8.89 4.2 2.54 0.56 8.38 0.290 0.050 0.200 0.015 0.004 TYP. MAX. 10.03 9.04 4.57 MIN. 0.385 0.350 0.165 0.100 0.022 0.330 inch TYP. MAX. 0.395 0.356 0.180 DIM. P027A 11/12 HCC/HCF40109B Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 12/12 |
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